FYS4310 – Material Science of Semiconductors
Schedule, syllabus and examination date
Changes in the course due to coronavirus Spring 2020
Teaching and examinations will take place digitally. This may result in changes to your schedule, mandatory activities, exam form and grading scale. See updated information on the semester page and in Canvas.
The preparation and processing of semiconductors made to produce devices is used as a framework to learn topics in materials science. The framework span from raw material purification and crystal growth to rediculously large integrated circuits and microsystems. Basic principles and examples are drawn mainly from Si, Si-Ge, III-V technology: Crystal defects, Vacancy models, stacking fault creation and dynamics, pair-production of doping atoms, deep levels, defect reactions, gettering, interaction of low energetic ions with semiconductor materials. Experimental methods for semiconductor process characterization; CV, IV, SEM, SIMS,AES, STM, RBS, TEM, elipsometri,FTIR, DLTS etc Detailed physical description of semiconductor processing: epitaxial crystal growth , MBE, MOCVD, diffusion, ion implantation, ion etching, oxidation, thin film technology, silicidation , laser treatment, micro-machining. Student also pick a project/topic to be presented in the course.
The knowledge is a common base for all students of physical electronics and simultaneously provide a link for communication with students and researches of other primary disciplines such as modern electronic engineering, nanotechnology, solid state physics and material science. The aim is to obtain the basis for understanding the link between different processing techniques and the characteristics of a semiconductor. The course will provide insight into some of the steps in the production of semiconductor devices. The course also provides an introduction to experimental methods that are used in parts of physical electronics and which are often used as documentation for published scientific results.
Testing of learned knowledge:
The course has graded homework. Thus the students has to learn during the whole semester. These problems will be a combination of simple calculations where the student applies the content of the book and problems where the student may combine knowledge and information in order to achieve new knowledge. The thought process is here more important than the result. The students will train in problem solving. The master students should be able to follow a discussion with researchers on topics from the curriculum. These chores and skills and absorbtion of learning goals will be tested during the course and final exam -se also bolow on exam.
Admission to the course
Students at UiO register for courses and exams in Studentweb.
Recommended previous knowledge
- 10 credits overlap with FYS9310 – Material Science of Semiconductors.
One semester , 4 hours pr week divided between lectures (70%) and discussion of problems.
3 multiple choice exams during the semester (approved/not approved). 3 compulsory exercises (approx. 30% weight). Project work (approx. 20% weight). Final oral exam (approx. 50% weight).
It will also be counted as one of the three attempts to sit the exam for this course, if you sit the exam for one of the following courses: FYS9310 – Material Science of Semiconductors
Grades are awarded on a scale from A to F, where A is the best grade and F is a fail. Read more about the grading system.
Resit an examination
This course offers both postponed and resit of examination. Read more: